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 Semiconductor
DN030S
NPN Silicon Transistor
Features
* Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= 0.1V Typ. @IC /IB =100mA/10mA) * Suitable for low voltage large current drivers * Complementary pair with DP030S * Switching Application
Ordering Information
Type NO. DN030S Marking N01 Package Code SOT-23F
Outline Dimensions
2.40.1 1.60.1
unit : mm
1
2.90.1 1.90 BSC
3 2
0.150.05 0.40.05
PIN Connections 1. Base 2. Emitter 3. Collector
KST-2109-000
0.90.1
0~0.1
1
DN030S
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature
(Ta=25 C)
Symbol
VCBO VCEO VEBO IC PC Tj T stg
Ratings
15 12 5 300 200 150 -55~150
Unit
V V V mA mW C C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage
(Ta=25 C)
Symbol
BVCBO BVCEO BVEBO ICBO IEBO h FE1 h FE2 VCE(sat1) VCE(sat2) VBE(sat1) VBE(sat2) fT C ob
Test Condition
IC=50A, I E =0 IC=1mA, IB =0 IE =50A, IC =0 VCB=12V, IE =0 VEB =5V, I C=0 VCE=1V, IC =100mA VCE=1V, IC =300mA IC=100mA, IB =10mA IC=300mA, IB =30mA IC=100mA, IB =10mA IC=300mA, IB =30mA VCE=5V, IC =10mA VCB=10V, IE =0, f=1MHz
Min.
15 12 5 200 70 -
Typ.
300 3
Max.
0.1 0.1 450 0.2 0.5 1.2 1.7 -
Unit
V V V A A V V V V MHz PF
Base-Emitter saturation voltage Transition frequency Collector output capacitance
KST-2109-000
2
DN030S
Electrical Characteristic Curves
Fig. 1 PC - Ta Fig. 2 IC -VBE
Fig. 3 hFE - IC
Fig. 4 IC - VCE
Fig. 5 VCE(sat) - IC
KST-2109-000
3


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